Paper Title:
Thermal Stress Distribution in the Corner of IC Package Structure
  Abstract

Passivation cracking is one of the main failures of Integrated circuits (ICs). A major cause for these failures is due to the mismatch of Coefficients of Thermal Expansion (CTE), Young’s modulus, Poisson’s ratios of package materials. In this paper, in order to analysis the stress distribution around the passivation layer corner, the finite element simulations and simplified analytical solutions are both applied. Then the comparison of stress values is made between the FEM result and simplified analytical solution, which shows that there is a good agreement. Based on these analyses, a conclusion can be drawn out that the simplified analytical model can be used to analyze the maximum stress around the passivation layer corner fast when design a chip preliminarily.

  Info
Periodical
Key Engineering Materials (Volumes 353-358)
Edited by
Yu Zhou, Shan-Tung Tu and Xishan Xie
Pages
2900-2903
DOI
10.4028/www.scientific.net/KEM.353-358.2900
Citation
H. P. Li, R. Shi, Y. T. He, H. X. Zhang, F. Li, "Thermal Stress Distribution in the Corner of IC Package Structure", Key Engineering Materials, Vols. 353-358, pp. 2900-2903, 2007
Online since
September 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Jae Bon Koo, Jung Wook Lim, Chan Hoe Ku, Sang Chul Lim, Jung Hun Lee, Seong Hyun Kim, Sun Jin Yun, Yong Suk Yang, Kyung Soo Suh
Abstract:We report on the fabrication of dual-gate pentacene organic thin-film transistors (OTFTs) using a plasma-enhanced atomic layer deposited...
383
Authors: Satoshi Yokomizo, Takuya Hoshina, Hiroaki Takeda, Katsuya Taniguchi, Youichi Mizuno, Hirokazu Chazono, Osamu Sakurai, Takaaki Tsurumi
Abstract:We researched the phenomenon that the permittivity of dielectric layers in multilayer ceramic capacitor (MLCC) increases with the number of...
31
Authors: P. Anithambigai, D. Mutharasu
Chapter 16: Semiconductor Materials Manufacturing
Abstract:This study elucidates the significance of thermal transient measurement based on structure function evaluation particularly on high power...
1363
Authors: Shou Xiang Chen, Xiu Lun Yang, Xiang Feng Meng, Yu Rong Wang, Lin Hui Wang, Guo Yan Dong
Chapter 3: Electronic Materials
Abstract:Plane-wave expansion method was employed to analyze the photonic band gap in two-dimensional silicon nitride photonic crystal. The effects of...
201
Authors: Tao Chen, Ming Qiang Pan, Yang Jun Wang, Ji Zhu Liu, Li Guo Chen, Li Ning Sun
Chapter 1: Mechatronics and Control
Abstract:Due to its simple structure, low consumption of energy but strong driving forces, Electrowetting on Dielectric (EWOD) is used most frequently...
14