Paper Title:
Mechanism of Brittle-Ductile Transition of Single Silicon Wafer at Different Temperatures
  Abstract

Formation, propagation and length of crack and hardness of single silicon wafer were investigated at different temperatures by means of Vickers indentation, using lower temperature testing unit with semiconductor refrigerating chip and higher temperature testing unit with closed electric furnace. The results show that the hardness of single silicon wafer decreases with the increase of temperature, while the length of crack increases with the increase of temperature. Ductile-brittle transition of the single silicon wafer can occur at different temperatures with the increase of load. When the load is smaller and temperature is lower, no cracks can be found.

  Info
Periodical
Key Engineering Materials (Volumes 359-360)
Edited by
Jiuhua Xu, Xipeng Xu, Guangqi Cai and Renke Kang
Pages
1-5
DOI
10.4028/www.scientific.net/KEM.359-360.1
Citation
Y. L. Sun, D. W. Zuo, Y. W. Zhu, D. S. Li, M. Qi, M. Wang, "Mechanism of Brittle-Ductile Transition of Single Silicon Wafer at Different Temperatures ", Key Engineering Materials, Vols. 359-360, pp. 1-5, 2008
Online since
November 2007
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$32.00
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