Paper Title:
Study on Pad Conditioning Parameters in Silicon Wafer CMP Process
  Abstract

Polishing pad plays a key role in determining polish rate and planarity of a chemical mechanical planarization (CMP). The properties of the pad would deteriorate during polishing because of pad surface grazing, which results in reduced removal rates and poorer planarity of wafer surface. Pad conditioning and its influence on pad surface structure and CMP process is introduced and discussed in this paper. The study shows that the surface structure can be regenerated by breaking up the glazed areas with conditioner, MRR(Material Removal Rate) can be maintained at high level with proper pad conditioning, and UN(Non-uniformity)can also improved. Orthogonal experiments design is employed in this study to determine the best conditioning parameters.

  Info
Periodical
Key Engineering Materials (Volumes 359-360)
Edited by
Jiuhua Xu, Xipeng Xu, Guangqi Cai and Renke Kang
Pages
309-313
DOI
10.4028/www.scientific.net/KEM.359-360.309
Citation
Z. Z. Zhou, J. L. Yuan, B. H. Lv, J. J. Zheng, "Study on Pad Conditioning Parameters in Silicon Wafer CMP Process", Key Engineering Materials, Vols. 359-360, pp. 309-313, 2008
Online since
November 2007
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Price
$32.00
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