Bi4-xLaxTi3O12 Ferroelectric Thin Films Prepared by RF Magnetron Sputtering |
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| Journal | Key Engineering Materials (Volumes 368 - 372) |
|---|---|
| Volume | High-Performance Ceramics V |
| Edited by | Wei Pan and Jianghong Gong |
| Pages | 109-111 |
| DOI | 10.4028/www.scientific.net/KEM.368-372.109 |
| Citation | Xing Ao Li et al., 2008, Key Engineering Materials, 368-372, 109 |
| Online since | February, 2008 |
| Authors | Xing Ao Li, Zu Li Liu, An You Zuo, Zuo Bin Yuan, Jian Ping Yang, Kai Lun Yao |
| Keywords | BLT Thin Film, Ferroelectric Property, RF Magnetron Sputtering |
| Abstract | Bi4-xLaxTi3O12 (BLT) ferroelectric thin films were deposited on Pt/Si substrates by RF magnetron sputtering with Bi4-xLaxTi3O12 (x=0.5, 0.75, 1) targets with 50-mm diameter and 5-mm thickness. The effects of La contents on microstructure and ferroelectric properties of Bi4-xLaxTi3O12 thin films were investigated. The grain growth behavior and ferroelectric properties such as remanent polarization were found to be dependent on the La contents in the BLT thin films. |
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