Paper Title:
Structure and Dielectric Properties of AlN Multilayered Film on Al Substrate
  Abstract

AlN multilayered films were deposited on Al substrates using RF reactive magnetron sputtering with Al targets under Ar and N2 atmosphere. Circles of deposition and annealing were repeatedly performed. Macrostructure observations, crystallographic analyses and dielectric property measurements were carried out. The grains of AlN film had a worm-like shape. When the number of layers (and cycles) increased, the (100) and (110) oriented grains weakened and the structure of film changed into (002) and (101) oriented. The capacity–frequency (C-f) curves of Cu-AlN-Al-Cu capacitors, measured at 100 Hz - 1 MHz, showed that the dielectric constant and the dielectric loss of AlN decrease with increasing number of cycles, attributed to annealing processes that influences film microstructure and the orientation of worm-like shape grains.

  Info
Periodical
Key Engineering Materials (Volumes 368-372)
Edited by
Wei Pan and Jianghong Gong
Pages
1383-1385
DOI
10.4028/www.scientific.net/KEM.368-372.1383
Citation
X. F. Song, R. L. Fu, H. He, D. L. Wang, "Structure and Dielectric Properties of AlN Multilayered Film on Al Substrate", Key Engineering Materials, Vols. 368-372, pp. 1383-1385, 2008
Online since
February 2008
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Price
$32.00
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