Paper Title:
Mass Loss in SiC Crystal Growth Process
  Abstract

The research investigated the mass loss in SiC crystal growth process by analyzing the effects of the content of Si appending in sources material, growth temperature, growth time and atmosphere pressure. The results indicate that mass loss of total system material (source material + crucible + crystal) and crucible augments with increasing of content of Si in sources material, growth temperature and growth time, but crystal mass gain increases. With increasing of atmosphere pressure, mass loss of system material decreases, crucible mass loss increases, crystal mass gain decreases. Si inclusions in crystal multiply with the increasing of the content of Si in source material.

  Info
Periodical
Key Engineering Materials (Volumes 368-372)
Edited by
Wei Pan and Jianghong Gong
Pages
1558-1560
DOI
10.4028/www.scientific.net/KEM.368-372.1558
Citation
J. K. Cheng, J. Q. Gao, J. F. Yang, J. L. Liu, X. Jiang, Y. G. Shi, "Mass Loss in SiC Crystal Growth Process", Key Engineering Materials, Vols. 368-372, pp. 1558-1560, 2008
Online since
February 2008
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Price
$32.00
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