Paper Title:
Ab-Initio Study on Adsorption and Diffusion of Au Atoms on Clean Si(001) and H-Si(001) Surface
  Abstract

Performing ab-initio total-energy calculations to investigate the adsorption and diffusion processes of the Au atoms with both the clean Si(001)-(1×1) and H-terminated Si(001)-(2×1) surfaces. It was found that, on the clean Si(001)-(1×1) surface, the most stable adsorption sites for Au atoms are middle part of four Si atoms, while on H-terminated Si(001)-(2×1) surface, the most stable sites are the middle part of a Si-Si dimer. The result showed that surface hydrogenation make most stable site transfer and affect the adsorption of Au on Si(001) surface.

  Info
Periodical
Key Engineering Materials (Volumes 368-372)
Edited by
Wei Pan and Jianghong Gong
Pages
1699-1701
DOI
10.4028/www.scientific.net/KEM.368-372.1699
Citation
W. W. Ju, T. W. Li, J. H. You, Z. X. Tang, X. Y. Gong, H. Wang, Z. Q. Zhen, Q. G. Zhang, "Ab-Initio Study on Adsorption and Diffusion of Au Atoms on Clean Si(001) and H-Si(001) Surface", Key Engineering Materials, Vols. 368-372, pp. 1699-1701, 2008
Online since
February 2008
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Price
$32.00
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