Paper Title:
Microwave Characteristics of ZnO-Doped CeO2 Dielectric Resonators
  Abstract

CeO2 ceramics with ZnO additions (1 and 2 wt%) were prepared with conventional solid-state route have been investigated. Doping with ZnO (up to 1 wt%) can effectively promote the densification of CeO2 ceramics at low sintering temperature. At 1550 oC, CeO2 ceramics with 1 wt% ZnO addition possesses a dielectric constant ( ε r) of 23.2, a Q×f value of 53000 GHz and a temperature coefficient of resonant frequency (τf) of –47 ppm/oC.

  Info
Periodical
Key Engineering Materials (Volumes 368-372)
Edited by
Wei Pan and Jianghong Gong
Pages
188-191
DOI
10.4028/www.scientific.net/KEM.368-372.188
Citation
C. H. Hsu, H. H. Tung, C. H. Lai, M. H. Chung, "Microwave Characteristics of ZnO-Doped CeO2 Dielectric Resonators", Key Engineering Materials, Vols. 368-372, pp. 188-191, 2008
Online since
February 2008
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$32.00
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