Paper Title:
Gallium and Nitrogen Co-Doped ZnO Thin Films by Pulsed Laser Deposition
  Abstract

Pulsed laser deposition (PLD) technique is a very powerful method for fabricating various oxide thin films due to its native merits. In this study, gallium and nitrogen co-doped ZnO thin films (0.1 at.%) were deposited at different temperatures (100-600°C) on sapphire (001) substrates by using PLD. X-ray diffractometer, atomic force microscope, spectrophotometer, and spectrometer were used to characterize the structural, the morphological and the optical properties of the thin films. Hall measurements were also carried out to identify the electrical properties of the thin films.

  Info
Periodical
Key Engineering Materials (Volumes 368-372)
Edited by
Wei Pan and Jianghong Gong
Pages
322-325
DOI
10.4028/www.scientific.net/KEM.368-372.322
Citation
G.X. Liu, F.K. Shan, B. C. Shin, W. J. Lee, "Gallium and Nitrogen Co-Doped ZnO Thin Films by Pulsed Laser Deposition", Key Engineering Materials, Vols. 368-372, pp. 322-325, 2008
Online since
February 2008
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Price
$32.00
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