Position-sensitive photodetectors, a useful class of sensor with a wide range of applications in automatization and measuring techniques, on the basis of a La0.7Sr0.3MnO3/Si heterojunction have been developed. Thin p-La0.7Sr0.3MnO3 films were grown on n-Si substrates by laser molecular beam epitaxy. The large lateral photovoltaic effect has been observed in response to excitation by ultraviolet laser spot irradiation. The position characteristics are symmetric to the zero and linear between the contacts. The devices work well under unbiased conditions and so are simple to configure for practical applications.