Preparation of Mg and Ti Co-Doped NiO-Based Ceramic and its High Dielectric Properties |
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| Journal | Key Engineering Materials (Volumes 368 - 372) |
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| Volume | High-Performance Ceramics V |
| Edited by | Wei Pan and Jianghong Gong |
| Pages | 37-39 |
| DOI | 10.4028/www.scientific.net/KEM.368-372.37 |
| Citation | Bo Cheng et al., 2008, Key Engineering Materials, 368-372, 37 |
| Online since | February, 2008 |
| Authors | Bo Cheng, Yuan Hua Lin, Jing Nan Cai, Ce Wen Nan |
| Keywords | Dielectric, Grain Boundary, Mg-Ti-Ni-O |
| Abstract | We present Mg and Ti co-doped NiO-based polycrystalline ceramic with high-permittivity dielectric properties. Analysis of the ceramic’s microstructure and composition proves that obvious grain boundaries NiTiO3 are formed. The measurements of frequency and temperature dependence of impedance and dielectric permittivity indicate that the grain and grain boundaries have remarkable influence on the dielectric properties due to the various activation energies. |
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