CuIn1-xGaxSe2 (CIGS) precursor films were fabricated on Mo foils by one-step electrodeposition in water and alcohol solutions. The precursor films were annealed in Ar atmosphere at 450°C to synthesize the polycrystalline thin films. The current density vs. potential curves of Cu2+, In3+, Ga3+ and Se4+ was studied by cyclic voltammetry. The compositions of CIGS, were analyzed by energy dispersive X-ray spectrum. The morphology and phase structure of films was characterized by scanning electron microscopy and X-ray diffraction, respectively.