Paper Title:
Electrical Properties of Sb-Doped BaPbO3 Ceramics
  Abstract

Sb-doped BaPbO3 ceramics were prepared by sol-gel method. The influence of Pb/Ba ratio and Sb concentration on the electrical properties of BaPb1+x-ySbyO3 (x=0.0, 0.1, 0.2 and 0≤y≤0.2) compositions were investigated. Holes and Pb vacancies were the major defects in lightly donor-doped BaPbO3, where the increase of donor concentration resulted in decrease of charge carriers (holes), leading to resistivity increasing. In the highly donor-doped conditions, the microstructure or solid solubility substituted defect structure as the main factor affecting the variety of resistivity. The lowest electrical resistivity of Sb-doped BaPbO3 was 2.69 × 10-4 /·cm when the Sb concentration y=0.12~0.13. Excess of Pb causes the born of barium vacancies. And, the observed PTCR behavior of BaPb1.2O3 involves the Barium vacancies in grain boundaries. 0.5 mol% Sb-doped BaPbO3 showed the best PTCR behavior and its Curie temperature was about 850°C.

  Info
Periodical
Key Engineering Materials (Volumes 368-372)
Edited by
Wei Pan and Jianghong Gong
Pages
653-655
DOI
10.4028/www.scientific.net/KEM.368-372.653
Citation
X. Wang, Y. D. Lu, Z. Q. Zhuang, "Electrical Properties of Sb-Doped BaPbO3 Ceramics", Key Engineering Materials, Vols. 368-372, pp. 653-655, 2008
Online since
February 2008
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$32.00
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