Paper Title:
Electrical and Physical Characteristics of Ba(Zr0.1Ti0.9)O3 Thin Films under Oxygen Plasma Treatment for Nonvolatile Memory Devices Application
  Abstract

In this study, the effects of oxygen gas plasma on the surface treatment of Ba(Zr0.1Ti0.9)O3 (BZT) films are investigated. The influence of plasma on the structure is developed by using X-ray diffraction patterns and the electrical characteristics are developed by using the MIM and MFIS capacitor structure. Experiment results clearly indicate that the electrical characteristics of BZT film have improved effectively within oxygen plasma surface treatment.

  Info
Periodical
Key Engineering Materials (Volumes 368-372)
Edited by
Wei Pan and Jianghong Gong
Pages
75-77
DOI
10.4028/www.scientific.net/KEM.368-372.75
Citation
K. H. Chen, Y. C. Chen, W. K. Chia, Z. S. Chen, C. F. Yang, H. H. Chung, "Electrical and Physical Characteristics of Ba(Zr0.1Ti0.9)O3 Thin Films under Oxygen Plasma Treatment for Nonvolatile Memory Devices Application", Key Engineering Materials, Vols. 368-372, pp. 75-77, 2008
Online since
February 2008
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Price
$32.00
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