Electrical and Physical Characteristics of Ba(Zr0.1Ti0.9)O3 Thin Films under Oxygen Plasma Treatment for Nonvolatile Memory Devices Application |
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| Journal | Key Engineering Materials (Volumes 368 - 372) |
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| Volume | High-Performance Ceramics V |
| Edited by | Wei Pan and Jianghong Gong |
| Pages | 75-77 |
| DOI | 10.4028/www.scientific.net/KEM.368-372.75 |
| Citation | Kai Huang Chen et al., 2008, Key Engineering Materials, 368-372, 75 |
| Online since | February, 2008 |
| Authors | Kai Huang Chen, Ying Chung Chen, Wei Kuo Chia, Zhi Sheng Chen, Cheng Fu Yang, Ho Hua Chung |
| Keywords | BZT, Coercive Field, Leakage Current Density, Remnant Polarization |
| Abstract | In this study, the effects of oxygen gas plasma on the surface treatment of Ba(Zr0.1Ti0.9)O3 (BZT) films are investigated. The influence of plasma on the structure is developed by using X-ray diffraction patterns and the electrical characteristics are developed by using the MIM and MFIS capacitor structure. Experiment results clearly indicate that the electrical characteristics of BZT film have improved effectively within oxygen plasma surface treatment. |
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