Electrical Characteristics and Microstructures of Ce-Doped Bi4Ti3O12 Films |
|
| Journal | Key Engineering Materials (Volumes 368 - 372) |
|---|---|
| Volume | High-Performance Ceramics V |
| Edited by | Wei Pan and Jianghong Gong |
| Pages | 91-94 |
| DOI | 10.4028/www.scientific.net/KEM.368-372.91 |
| Citation | S. Chen et al., 2008, Key Engineering Materials, 368-372, 91 |
| Online since | February, 2008 |
| Authors | S. Chen, A.H. Cai, X.A. Mei, Chong Qing Huang, W.K. An, Min Chen |
| Keywords | Dielectric, Doping, Ferroelectric, Film |
| Abstract | Sm-doped bismuth titanate and random oriented Bi4-xCexTi3O12 (BCT) thin films were fabricated on Pt/Ti/SiO2/Si substrates rf magnetron sputtering technique. The structures and the ferroelectric properties of the films were investigated. Ce doping leads to a marked improvement in the remanent polarization (Pr) and the coercive field (Ec). At the applied electric field of 100 kV/cm, Pr and Ec of the BCT (x = 0.8) film annealed at 650 oC are 20.5 μC/cm2 and 60 KV/cm, respectively. However, after 3 × 1010 switching cycles, 20% degradation of 2Pr is observed in the film. |
| Full Paper | 
Get the full paper by clicking here
|
First page example
