Paper Title:
Layer Structure Growth of Orthorhombic Boron Nitride Thin Films by RF-PEPLD
  Abstract

Orthorhombic boron nitride film is prepared on Si(100) substrate by radio frequency plasma enhanced pulse (Nd:YAG) laser deposition (RF-PEPLD) in Ar-N2 gas system, assisted with substrate pulse negative bias -150v, substrate temperature of 500°C and deposition time of 30 minutes. The phase compositions of the film are characterized by Fourier transform infrared (FTIR) spectroscopy, glancing-angle X-ray diffraction (XRD), Raman spectroscopy and scanning electron microscopy (SEM). The results show that high quality orthorhombic boron nitride film has been prepared. A layer structure growth mechanism of orthorhombic boron nitride phase upon RF-PEPLD is discussed in this paper. A thin layer h-BN [101] is deposited before depositing o-BN and h-BN mixed phase, then o-BN percentage composition of the BN film becomes creasing.

  Info
Periodical
Key Engineering Materials (Volumes 368-372)
Edited by
Wei Pan and Jianghong Gong
Pages
929-932
DOI
10.4028/www.scientific.net/KEM.368-372.929
Citation
W. Q. Li, L. J. Zhou, Y. N. Zhao, "Layer Structure Growth of Orthorhombic Boron Nitride Thin Films by RF-PEPLD", Key Engineering Materials, Vols. 368-372, pp. 929-932, 2008
Online since
February 2008
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