Effect of Tb Substitution on Electrical Characteristics and Microstructures of Bismuth Titanate Ceramics |
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| Journal | Key Engineering Materials (Volumes 368 - 372) |
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| Volume | High-Performance Ceramics V |
| Edited by | Wei Pan and Jianghong Gong |
| Pages | 95-97 |
| DOI | 10.4028/www.scientific.net/KEM.368-372.95 |
| Citation | Min Chen et al., 2008, Key Engineering Materials, 368-372, 95 |
| Online since | February, 2008 |
| Authors | Min Chen, W.K. An, A.H. Cai, Chong Qing Huang, K.L. Su, J. Liu |
| Keywords | Dielectric, Ferroelectric |
| Abstract | The electrical properties and Microstructures of Tb-doped bismuth titanate (Bi3.3Tb0.6Ti3O12) ceramic were investigated. XRD analyses revealed that the sample had Bi-layered perovskite structure. SEM micrographs showed randomly oriented and plate-like morphology. The remanent polarization (Pr) and coercive field (Ec) of Bi3.3Tb0.6Ti3O12 ceramic are above 25 μC/cm2 and 80 KV/cm, respectively. |
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