Paper Title:
Study on Chemical Mechanical Polishing Technology of Copper
  Abstract

Chemical mechanical polishing (CMP) of copper films in alkaline slurries was investigated. In the copper CMP, the slurry was made by adding colloidal silica abrasive to de-ionized water.The organic alkali was added to adjust the pH, H2O2 was used as an oxidizer.The effects of varying polishing temperature, polishing pressure, slurry flow rate, organic alkali concentration and oxidizer concentration on removal rate were investigated in order to determine the optimum conditions for those parameters. It is shown the chemical composition of the slurry was 2%~3% oxidizer concentration, 3% organic alkali concentration and proper amount surfactant is reasonable. The solid concentration of the polishing slurry was fixed at 20% by weight. The removal rate of copper could reach 700nm/min and the surface roughness after CMP was 0.49nm.

  Info
Periodical
Key Engineering Materials (Volumes 373-374)
Main Theme
Edited by
M.K. Lei, X.P. Zhu, K.W. Xu and B.S. Xu
Pages
820-823
DOI
10.4028/www.scientific.net/KEM.373-374.820
Citation
S. L. Wang, Y.J. Yuan, Y. L. Liu, X.H. Niu, "Study on Chemical Mechanical Polishing Technology of Copper", Key Engineering Materials, Vols. 373-374, pp. 820-823, 2008
Online since
March 2008
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Price
$32.00
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