Paper Title:
Development of Nanometrology for Nanoelectronics: Growth and Characterization of Transition Metal Monolayer Films on Silicon
  Abstract

The paper presents metrology of the growth and characterization of 3d metal monolayer films on silicon. EELS analysis of plasmon peaks during the layer-by-layer growth of Co films on Si(111) demonstrate that thickness measurement of the monolayer films is possible on base of spectra decomposition with interface and film plasmon peak extracting. Results of the resistivity measurement of Co films on Si(111) with different state of the surface correlate with growth mechanism of the films on AES data. AFM-pictures show replication of step surface relief versus the thickness demonstrating growth of the smooth Fe nanofilm on Si(100).

  Info
Periodical
Key Engineering Materials (Volumes 381-382)
Edited by
Wei Gao, Yasuhiro Takaya, Yongsheng Gao and Michael Krystek
Pages
529-532
DOI
10.4028/www.scientific.net/KEM.381-382.529
Citation
N.I. Plusnin, W.M. Il'yashenko, S.A. Kitan, S.V. Krylov, "Development of Nanometrology for Nanoelectronics: Growth and Characterization of Transition Metal Monolayer Films on Silicon", Key Engineering Materials, Vols. 381-382, pp. 529-532, 2008
Online since
June 2008
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