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Epitaxial Growth of LSMO Film Prepared by Excimer Laser-Assisted Metal Organic Deposition (ELAMOD)

Journal Key Engineering Materials (Volume 388)
Volume Electroceramics in Japan XI
Edited by Kazumi Kato, Tadashi Takenaka, Masasuke Takata and Kazuo Shinozaki
Pages 133-136
DOI 10.4028/www.scientific.net/KEM.388.133
Citation Tetsuo Tsuchiya et al., 2008, Key Engineering Materials, 388, 133
Online since September, 2008
Authors Tetsuo Tsuchiya, Kais Daoudi, Tomohiko Nakajima, Toshiya Kumagai
Keywords Epitaxial Growth, Excimer Laser, LSMO, MOD, Oxide Film, Polycrystalline Growth
Abstract

The La1-xAxMnO3 (A=Sr, Ca, Ba) film was prepared by excimaer laser-assisted metal organic deposition (ELAMOD). To understand the important controlling factor of the epitaxial growth using ELAMOD, the effects of the substrate temperature, substrate type, wavelength, and film thickness on the epitaxial growth were investigated. When the film thickness was 200nm with heating at 250°C, a polycrystalline LSMO film was formed on the LAO substrate. On the other hand, at 80nm, an epitaxial LSMO film was formed on the LAO substrate at 500°C. The epitaxial growth of the LSMO film was found to be dependent on the substrate materials and the laser wavelength. The formation of the epitaxial and polycrystalline LSMO films was discussed

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