Paper Title:
Patterning of HfO2 Thin Films Using Chemical Solution and Dielectric Properties
  Abstract

HfO2 precursor solutions were prepared by modification of alkoxide for patterning of HfO2 films. The HfO2 dots were patterned on Si substrate by inkjet printing method. The electrical properties of HfO2 films prepared by inkjet printing method were almost same as the properties of the HfO2 films prepared by spin-coating method. Additionally, the HfO2 nanostructures were successfully patterned by nanoimprint method using the chemically-modified alkoxy-derived precursor solution.

  Info
Periodical
Edited by
Kazumi Kato, Tadashi Takenaka, Masasuke Takata and Kazuo Shinozaki
Pages
141-144
DOI
10.4028/www.scientific.net/KEM.388.141
Citation
K. Suzuki, K. Kato, "Patterning of HfO2 Thin Films Using Chemical Solution and Dielectric Properties", Key Engineering Materials, Vol. 388, pp. 141-144, 2009
Online since
September 2008
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