Patterning of HfO2 Thin Films Using Chemical Solution and Dielectric Properties |
|
| Journal | Key Engineering Materials (Volume 388) |
|---|---|
| Volume | Electroceramics in Japan XI |
| Edited by | Kazumi Kato, Tadashi Takenaka, Masasuke Takata and Kazuo Shinozaki |
| Pages | 141-144 |
| DOI | 10.4028/www.scientific.net/KEM.388.141 |
| Citation | Kazuyuki Suzuki et al., 2008, Key Engineering Materials, 388, 141 |
| Online since | September, 2008 |
| Authors | Kazuyuki Suzuki, Kazumi Kato |
| Keywords | Dielectric Properties, Film, HfO2, Patterning, Precursor Solution |
| Abstract | HfO2 precursor solutions were prepared by modification of alkoxide for patterning of HfO2 films. The HfO2 dots were patterned on Si substrate by inkjet printing method. The electrical properties of HfO2 films prepared by inkjet printing method were almost same as the properties of the HfO2 films prepared by spin-coating method. Additionally, the HfO2 nanostructures were successfully patterned by nanoimprint method using the chemically-modified alkoxy-derived precursor solution. |
| Full Paper | 
Get the full paper by clicking here
|
First page example
