Influence of Hydrogen Atoms on Electrical Properties of BST Thin Film Capacitors |
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| Journal | Key Engineering Materials (Volume 388) |
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| Volume | Electroceramics in Japan XI |
| Edited by | Kazumi Kato, Tadashi Takenaka, Masasuke Takata and Kazuo Shinozaki |
| Pages | 167-170 |
| DOI | 10.4028/www.scientific.net/KEM.388.167 |
| Citation | Kentaro Morito et al., 2008, Key Engineering Materials, 388, 167 |
| Online since | September, 2008 |
| Authors | Kentaro Morito, Toshimasa Suzuki, Youichi Mizuno, Isao Sakaguchi, Naoki Ohashi, Hajime Haneda |
| Keywords | Barium Strontium Titanate, Complex Impedance, Equivalent Circuit, Hydrogen, Secondary Ion Mass Spectroscopy (SIMS), Thin Film |
| Abstract | The relationship between the distribution of hydrogen and the electrical properties of (Ba, Sr)TiO3 (BST) thin film capacitors was investigated using secondary ion mass spectroscopy (SIMS) analyses. It has been clearly shown that there is a close relationship between the hydrogen distribution in BST thin film and the frequency dependence of the complex impedance of the BST thin film capacitors. It was confirmed that protons, the interstitial hydrogen impurity dissolved in BST thin films annealed at 400oC, were produced by a thermal equilibrium reaction between the hydrogen in the annealing atmosphere and the BST thin films. |
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