Paper Title:
Influence of Hydrogen Atoms on Electrical Properties of BST Thin Film Capacitors
  Abstract

The relationship between the distribution of hydrogen and the electrical properties of (Ba, Sr)TiO3 (BST) thin film capacitors was investigated using secondary ion mass spectroscopy (SIMS) analyses. It has been clearly shown that there is a close relationship between the hydrogen distribution in BST thin film and the frequency dependence of the complex impedance of the BST thin film capacitors. It was confirmed that protons, the interstitial hydrogen impurity dissolved in BST thin films annealed at 400oC, were produced by a thermal equilibrium reaction between the hydrogen in the annealing atmosphere and the BST thin films.

  Info
Periodical
Edited by
Kazumi Kato, Tadashi Takenaka, Masasuke Takata and Kazuo Shinozaki
Pages
167-170
DOI
10.4028/www.scientific.net/KEM.388.167
Citation
K. Morito, T. Suzuki, Y. Mizuno, I. Sakaguchi, N. Ohashi, H. Haneda, "Influence of Hydrogen Atoms on Electrical Properties of BST Thin Film Capacitors", Key Engineering Materials, Vol. 388, pp. 167-170, 2009
Online since
September 2008
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$32.00
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