Paper Title:
Effect of the Annealing Temperature on Dielectric Properties of Bi1.5Zn1.0Nb1.5O7 Films Prepared by MOCVD
  Abstract

Effect of annealing temperature on the dielectric properties of Bi1.5Zn1.0Nb1.5O7 films prepared on (111)Pt//(001)Al2O3 and (111)Pt/fused silica substrates by MOCVD was investigated. The tunability and the inverse of the dielectric loss [1/ (tan )] increased with increasing annealing temperature. Relative dielectric constant and temperature coefficient of the capacitance (TCC) increased with the crystallinity of the films. On the other hand, (1/tan ) was independent of the crystallinity of the films, but was dramatically increased by the annealing.

  Info
Periodical
Edited by
Kazumi Kato, Tadashi Takenaka, Masasuke Takata and Kazuo Shinozaki
Pages
175-178
DOI
10.4028/www.scientific.net/KEM.388.175
Citation
H. Funakubo, S. Okaura, M. Suzuki, H. Uchida, S. Koda, "Effect of the Annealing Temperature on Dielectric Properties of Bi1.5Zn1.0Nb1.5O7 Films Prepared by MOCVD", Key Engineering Materials, Vol. 388, pp. 175-178, 2009
Online since
September 2008
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