Effect of the Annealing Temperature on Dielectric Properties of Bi1.5Zn1.0Nb1.5O7 Films Prepared by MOCVD |
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| Journal | Key Engineering Materials (Volume 388) |
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| Volume | Electroceramics in Japan XI |
| Edited by | Kazumi Kato, Tadashi Takenaka, Masasuke Takata and Kazuo Shinozaki |
| Pages | 175-178 |
| DOI | 10.4028/www.scientific.net/KEM.388.175 |
| Citation | Hiroshi Funakubo et al., 2008, Key Engineering Materials, 388, 175 |
| Online since | September, 2008 |
| Authors | Hiroshi Funakubo, Shingo Okaura, Muneyasu Suzuki, Hiroshi Uchida, Seiichiro Koda |
| Keywords | Annealing Temperature, Bi1.5Zn1.0Nb1.5O7 Film, MOCVD |
| Abstract | Effect of annealing temperature on the dielectric properties of Bi1.5Zn1.0Nb1.5O7 films prepared on (111)Pt//(001)Al2O3 and (111)Pt/fused silica substrates by MOCVD was investigated. The tunability and the inverse of the dielectric loss [1/ (tan )] increased with increasing annealing temperature. Relative dielectric constant and temperature coefficient of the capacitance (TCC) increased with the crystallinity of the films. On the other hand, (1/tan ) was independent of the crystallinity of the films, but was dramatically increased by the annealing. |
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