Preparation of Epitaxial LiNbO3 Thin Film by MOCVD and its Properties |
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| Journal | Key Engineering Materials (Volume 388) |
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| Volume | Electroceramics in Japan XI |
| Edited by | Kazumi Kato, Tadashi Takenaka, Masasuke Takata and Kazuo Shinozaki |
| Pages | 179-182 |
| DOI | 10.4028/www.scientific.net/KEM.388.179 |
| Citation | Rintarou Morohashi et al., 2008, Key Engineering Materials, 388, 179 |
| Online since | September, 2008 |
| Authors | Rintarou Morohashi, Naoki Wakiya, Takanori Kiguchi, Tomohiko Yoshioka, Junzo Tanaka, Kazuo Shinozaki |
| Keywords | Epitaxial Film, LiNbO3, MOCVD, Optical Property, Refractive Index, Thin Film |
| Abstract | Lithium niobate (LiNbO3) thin films were deposited on Al2O3(001) substrates using metal-organic chemical vapor deposition (MOCVD), with Li(dpm) and Nb(C2H5)5 as precursors. By optimizing the conditions of thin film deposition, the c-axis oriented and epitaxially grown LiNbO3 thin films with stoichiometric composition were deposited on an Al2O3(001) substrate. The refractive index of the stoichiometric LiNbO3 thin film was 2.24 at = 632.8 nm, which is close to that of bulk crystal. |
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