Photoluminescence from ZnO Thin Film Deposited on R-Plane Sapphire Substrate by RF Magnetron Sputtering |
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| Journal | Key Engineering Materials (Volume 388) |
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| Volume | Electroceramics in Japan XI |
| Edited by | Kazumi Kato, Tadashi Takenaka, Masasuke Takata and Kazuo Shinozaki |
| Pages | 19-22 |
| DOI | 10.4028/www.scientific.net/KEM.388.19 |
| Citation | Shigeru Tanaka et al., 2008, Key Engineering Materials, 388, 19 |
| Online since | September, 2008 |
| Authors | Shigeru Tanaka, Yukari Ishikawa, Toshiyuki Suzuki, Noriyoshi Shibata |
| Keywords | Epitaxial Growth, Photoluminescence (PL), R-Plane Sapphire, Thin Film, Zinc Oxide ZnO |
| Abstract | Photoluminescence from epitaxial ZnO thin films deposited on R-plane sapphire substrates by RF magnetron sputtering was investigated. The intensity of the near band emission (NBE) of the ZnO thin film on R-plane sapphire was stronger than that of the film formed on C-plane sapphire at a low temperature. Some experimental results suggest that NBE depends on the polarization of the excitation light, which are considered to be related to the ZnO crystal orientation on the sapphire substrate. |
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