Paper Title:
Photoluminescence from ZnO Thin Film Deposited on R-Plane Sapphire Substrate by RF Magnetron Sputtering
  Abstract

Photoluminescence from epitaxial ZnO thin films deposited on R-plane sapphire substrates by RF magnetron sputtering was investigated. The intensity of the near band emission (NBE) of the ZnO thin film on R-plane sapphire was stronger than that of the film formed on C-plane sapphire at a low temperature. Some experimental results suggest that NBE depends on the polarization of the excitation light, which are considered to be related to the ZnO crystal orientation on the sapphire substrate.

  Info
Periodical
Edited by
Kazumi Kato, Tadashi Takenaka, Masasuke Takata and Kazuo Shinozaki
Pages
19-22
DOI
10.4028/www.scientific.net/KEM.388.19
Citation
S. Tanaka, Y. Ishikawa, T. Suzuki, N. Shibata, "Photoluminescence from ZnO Thin Film Deposited on R-Plane Sapphire Substrate by RF Magnetron Sputtering", Key Engineering Materials, Vol. 388, pp. 19-22, 2009
Online since
September 2008
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