Impurity Contamination and Diffusion during Annealing in Implanted ZnO |
|
| Journal | Key Engineering Materials (Volume 388) |
|---|---|
| Volume | Electroceramics in Japan XI |
| Edited by | Kazumi Kato, Tadashi Takenaka, Masasuke Takata and Kazuo Shinozaki |
| Pages | 23-26 |
| DOI | 10.4028/www.scientific.net/KEM.388.23 |
| Citation | Isao Sakaguchi et al., 2008, Key Engineering Materials, 388, 23 |
| Online since | September, 2008 |
| Authors | Isao Sakaguchi, Yutaka Adachi, Takeshi Ogaki, Kenji Matsumoto, Shunichi Hishita, Hajime Haneda, Naoki Ohashi |
| Keywords | Contamination, Diffusion, Ion-Implantation, Lithium, Secondary Ion Mass Spectroscopy (SIMS), Zinc Oxide ZnO |
| Abstract | The effect of ion implantation leading to contamination and diffusion of lithium impurity in ZnO ceramics substrates was investigated. The diffusion coefficients of Li in the implanted ZnO annealed at 1000 and 850ºC were in good agreement with those in the non-implanted ZnO. At 700ºC, Li diffusion in the implanted ZnO was strongly enhanced. Our results show that the defects introduced by the implantation enhance the impurity diffusion at low temperature annealing. |
| Full Paper | 
Get the full paper by clicking here
|
First page example
