Paper Title:
Impurity Contamination and Diffusion during Annealing in Implanted ZnO
  Abstract

The effect of ion implantation leading to contamination and diffusion of lithium impurity in ZnO ceramics substrates was investigated. The diffusion coefficients of Li in the implanted ZnO annealed at 1000 and 850°C were in good agreement with those in the non-implanted ZnO. At 700°C, Li diffusion in the implanted ZnO was strongly enhanced. Our results show that the defects introduced by the implantation enhance the impurity diffusion at low temperature annealing.

  Info
Periodical
Edited by
Kazumi Kato, Tadashi Takenaka, Masasuke Takata and Kazuo Shinozaki
Pages
23-26
DOI
10.4028/www.scientific.net/KEM.388.23
Citation
I. Sakaguchi, Y. Adachi, T. Ogaki, K. Matsumoto, S. Hishita, H. Haneda, N. Ohashi, "Impurity Contamination and Diffusion during Annealing in Implanted ZnO", Key Engineering Materials, Vol. 388, pp. 23-26, 2009
Online since
September 2008
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