Paper Title:
Effect of Annealing on Electrical Degradation Characteristics of ZnO Varistors
  Abstract

The effects of the thermally annealing of Bi-Mn-Co-Sb2O3-added ZnO varistors on their electrical degradation were investigated. For the samples with 0.01mol% Sb2O3added and without Sb2O3, no marked difference in the non linearity index of the voltage-current (V-I) characteristics was observed upon electrical degradation for the annealed and nonannealed samples. Upon increasing the amount of Sb2O3 added, the values of  increased after electrical degradation for the annealed samples. Moreover, the value of  after electrical degradation was proportional to the full width at half maximum (FWHM) of the X-ray diffraction peak for Zn2.33Sb0.67O4-type spinel particles under various annealing conditions. The added Sb2O3 did not dissolve in the ZnO grains but became segregated at grain boundaries. Therefore, it is speculated that the increase in the FWHM for the spinel particles is due to the increase in the numbers of fine spinel particles at grain boundaries and triple points.

  Info
Periodical
Edited by
Kazumi Kato, Tadashi Takenaka, Masasuke Takata and Kazuo Shinozaki
Pages
7-10
DOI
10.4028/www.scientific.net/KEM.388.7
Citation
M. Takada, S. Yoshikado, "Effect of Annealing on Electrical Degradation Characteristics of ZnO Varistors", Key Engineering Materials, Vol. 388, pp. 7-10, 2009
Online since
September 2008
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: A. Trinchi, W. Wlodarski, Sandro Santucci, D. Di Claudio, Maurizio Passacantando, C. Cantalini, B. Rout, S.J. Ippolito, K. Kalantar-Zadeh, G. Sberveglieri
Abstract:The microstructural characterization of r.f. magnetron sputtered ZnO thin films deposited on 6H-SiC is presented with a comprehensive...
123
Authors: Akimasa Kinoshita, Takashi Nishi, Takasumi Ohyanagi, Tsutomu Yatsuo, Kenji Fukuda, Hajime Okumura, Kazuo Arai
Abstract:The reaction and phase formation of the Ti/SiC Schottky contact as a function of the annealing temperature (400~700oC) were investigated....
643
Authors: Jian Sheng Xie, Ping Luan, Jin Hua Li
Chapter 9: Composite Materials II
Abstract:Using magnetron sputtering technology, the CuInSi nanocomposite thin films were prepared by multilayer synthesized method. The structure of...
2770
Authors: Jian Sheng Xie, Jin Hua Li, Ping Luan
Chapter 2: Surface, Subsurface and Interface Phenomena
Abstract:Thin CuInSi films have been prepared by magnetron co-sputtering, and followed by annealing in N2 atmosphere at different...
302
Authors: Wen Wu Zhong, Fa Min Liu, Qin Yi Shi, Wei Ping Chen
Chapter 1: Advanced Materials Science
Abstract:Al and Sb codoped ZnO thin films were prepared through a sol-gel spin coating method on glass substrates and annealed in different...
42