Study on Improvement of Material Removal Rate in Chemo-Mechanical Grinding (CMG) of Si Wafer |
| Journal |
Key Engineering Materials (Volumes 389 - 390) |
| Volume |
Advances in Abrasive Technology XI |
| Edited by |
Tsunemoto Kuriyagawa, Libo Zhou, Jiwang Yan and Nobuhito Yoshihara |
| Pages |
13-17 |
| DOI |
10.4028/www.scientific.net/KEM.389-390.13 |
| Online since |
September, 2008 |
| Authors |
J. Sasaki, T. Tsuruga, B.H. Soltani, Takahito Mitsuta, Y.B. Tian, Jun Shimizu, Li Bo Zhou, Hiroshi Eda, Y. Tashiro, Hisao Iwase, Sumio Kamiya |
| Keywords |
Chemo-Mechanical Grinding (CMG), Design of Experiment (DOE), Factorial Design, Insulated Bipolar Transistor (IGBT), Material Removal Rate (MRR), Silicon Wafer |
| Abstract |
Silicon wafer thinning process is meeting great challenges to fulfill requirements of
ultra-thin IGBT for automotive applications. Chemo-mechanical grinding (CMG) process is
potentially emerging stress relief thinning process which combines the advantages of fixed abrasive
machining and chemical mechanical polishing (CMP). A major issue in CMG of Si wafers is the
relatively low material removal rate (MRR). This paper studies the influence of the wheel
specifications and grinding conditions on the MRR of CMG. Two sets of three-factor two-level full
factorial designs of experiment (DOE)[1] are employed to reveal the main effects and interacted
effects of CMG wheel specifications and grinding parameters on MRR. The optimal combination
scenarios for improving MRR of CMG are analysized and obtained. By use of the optimal CMG
wheel and grinding parameters, the MRR of more than 60nm/min is achieved. |
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