Paper Title:
Machinability Investigation of Reaction-Bonded Silicon Carbide by Single-Point Diamond Turning
  Abstract

Reaction-bonded silicon carbide (RB-SiC) is a recently developed ceramic material with many merits such as low manufacturing temperature, dense structure, high purity and low cost. In the present paper, the precision machinability of RB-SiC was studied by microindentation and single-point diamond turning (SPDT) tests. The influence of depth of cut and tool feed rate on surface roughness and cutting force was investigated. Results showed that there was no clear ductile-brittle transition in machining behavior. The material removal mechanism involves falling of the SiC grains and intergranular microfractures of the bonding silicon, which prevents from large-scale cleavage fractures. The minimum surface roughness depends on the initial material microstructure in terms of sizes of the SiC grains and micro pores. This work preliminarily indicates that SPDT can be used as a high-efficiency machining process for RB-SiC.

  Info
Periodical
Key Engineering Materials (Volumes 389-390)
Edited by
Tsunemoto Kuriyagawa, Libo Zhou, Jiwang Yan and Nobuhito Yoshihara
Pages
151-156
DOI
10.4028/www.scientific.net/KEM.389-390.151
Citation
Z. Y. Zhang, J. W. Yan, T. Kuriyagawa, "Machinability Investigation of Reaction-Bonded Silicon Carbide by Single-Point Diamond Turning", Key Engineering Materials, Vols. 389-390, pp. 151-156, 2009
Online since
September 2008
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Price
$32.00
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