Machinability Investigation of Reaction-Bonded Silicon Carbide
by Single-Point Diamond Turning |
| Journal |
Key Engineering Materials (Volumes 389 - 390) |
| Volume |
Advances in Abrasive Technology XI |
| Edited by |
Tsunemoto Kuriyagawa, Libo Zhou, Jiwang Yan and Nobuhito Yoshihara |
| Pages |
151-156 |
| DOI |
10.4028/www.scientific.net/KEM.389-390.151 |
| Online since |
September, 2008 |
| Authors |
Zhi Yu Zhang, Ji Wang Yan, Tsunemoto Kuriyagawa |
| Keywords |
Diamond Turning, Ductile Machining, Machinability, Reaction-Bonded Silicon Carbide |
| Abstract |
Reaction-bonded silicon carbide (RB-SiC) is a recently developed ceramic material with
many merits such as low manufacturing temperature, dense structure, high purity and low cost. In
the present paper, the precision machinability of RB-SiC was studied by microindentation and
single-point diamond turning (SPDT) tests. The influence of depth of cut and tool feed rate on
surface roughness and cutting force was investigated. Results showed that there was no clear
ductile-brittle transition in machining behavior. The material removal mechanism involves falling
of the SiC grains and intergranular microfractures of the bonding silicon, which prevents from
large-scale cleavage fractures. The minimum surface roughness depends on the initial material
microstructure in terms of sizes of the SiC grains and micro pores. This work preliminarily indicates
that SPDT can be used as a high-efficiency machining process for RB-SiC. |
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