Material Removal Mechanism of Chemo-Mechanical Grinding (CMG) of Si Wafer by Using Soft Abrasive Grinding Wheel (SAGW) |
| Journal |
Key Engineering Materials (Volumes 389 - 390) |
| Volume |
Advances in Abrasive Technology XI |
| Edited by |
Tsunemoto Kuriyagawa, Libo Zhou, Jiwang Yan and Nobuhito Yoshihara |
| Pages |
459-464 |
| DOI |
10.4028/www.scientific.net/KEM.389-390.459 |
| Online since |
September, 2008 |
| Authors |
Dong Ming Guo, Y.B. Tian, Ren Ke Kang, Li Bo Zhou, M.K. Lei |
| Keywords |
Chemo-Mechanical Grinding (CMG), Mechanism, SAGW, Silicon Wafer, Ultra-Precision Grinding, XPS |
| Abstract |
An innovative fixed abrasive grinding process of chemo-mechanical grinding (CMG) by
using soft abrasive grinding wheel (SAGW) has been recently proposed to achieve a damage-free
ground workpiece surface. The basic principle, ideas and characteristics of CMG with SAGW are
briefly introduced in this paper. The CMG experiments using newly developed SAGW for Si wafer
are conducted at the condition of dry grinding. The grinding performances are evaluated and analyzed
in terms of surface roughness, surface topography and surface/subsurface damage of ground wafer by
use of Zygo interferometer, Scan
Introduction
ning Electron Microscope (SEM) and Cross-section Transmission
Electron Microscope (Cross-section TEM). The component of product of ground Si surface is studied
by X-ray Photoelectron Spectroscopy (XPS) to verify chemical reaction between the abrasive /
additives of grinding wheel and Si wafer. The CMG process model by using SAGW is developed to
understand the material removal mechanism and generation principle of damage-free surface. The
study results show that the material removal mechanism of CMG by using SAGW can be explained as
a hybrid process of chemical and mechanical action. |
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