Complete Recovery of Subsurface Structures of Machining-Damaged
Single Crystalline Silicon by Nd:YAG Laser Irradiation |
| Journal |
Key Engineering Materials (Volumes 389 - 390) |
| Volume |
Advances in Abrasive Technology XI |
| Edited by |
Tsunemoto Kuriyagawa, Libo Zhou, Jiwang Yan and Nobuhito Yoshihara |
| Pages |
469-474 |
| DOI |
10.4028/www.scientific.net/KEM.389-390.469 |
| Online since |
September, 2008 |
| Authors |
Ji Wang Yan, Tooru Asami, Tsunemoto Kuriyagawa |
| Keywords |
Nd:YAG Laser, Phase Transformation, Single Crystal Silicon, Subsurface Damage |
| Abstract |
Ultraprecision diamond-cut silicon wafers were irradiated by a nanosecond pulsed
Nd:YAG laser, and the resulting specimens were characterized using transmission electron
microscopy and micro-Raman spectroscopy. The results indicate that at specific laser energy
density levels, machining-induced amorphous layers and dislocated layers were both reconstructed
to a complete single-crystal structure identical to the bulk region. Similar effects were confirmed for
diamond-ground silicon wafers. Effects of overlapping irradiation were investigated and perfect
crystallographic uniformity was achieved in the boundary region. The recovery process involved
rapid melting of the near-surface amorphous layer, followed by epitaxial regrowth from the
damage-free crystalline bulk. |
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