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Complete Recovery of Subsurface Structures of Machining-Damaged Single Crystalline Silicon by Nd:YAG Laser Irradiation

Journal Key Engineering Materials (Volumes 389 - 390)
Volume Advances in Abrasive Technology XI
Edited by Tsunemoto Kuriyagawa, Libo Zhou, Jiwang Yan and Nobuhito Yoshihara
Pages 469-474
DOI 10.4028/www.scientific.net/KEM.389-390.469
Citation Ji Wang Yan et al., 2008, Key Engineering Materials, 389-390, 469
Online since September, 2008
Authors Ji Wang Yan, Tooru Asami, Tsunemoto Kuriyagawa
Keywords Nd:YAG Laser, Phase Transformation, Single Crystal Silicon, Subsurface Damage
Abstract

Ultraprecision diamond-cut silicon wafers were irradiated by a nanosecond pulsed Nd:YAG laser, and the resulting specimens were characterized using transmission electron microscopy and micro-Raman spectroscopy. The results indicate that at specific laser energy density levels, machining-induced amorphous layers and dislocated layers were both reconstructed to a complete single-crystal structure identical to the bulk region. Similar effects were confirmed for diamond-ground silicon wafers. Effects of overlapping irradiation were investigated and perfect crystallographic uniformity was achieved in the boundary region. The recovery process involved rapid melting of the near-surface amorphous layer, followed by epitaxial regrowth from the damage-free crystalline bulk.

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