Paper Title:
Complete Recovery of Subsurface Structures of Machining-Damaged Single Crystalline Silicon by Nd:YAG Laser Irradiation
  Abstract

Ultraprecision diamond-cut silicon wafers were irradiated by a nanosecond pulsed Nd:YAG laser, and the resulting specimens were characterized using transmission electron microscopy and micro-Raman spectroscopy. The results indicate that at specific laser energy density levels, machining-induced amorphous layers and dislocated layers were both reconstructed to a complete single-crystal structure identical to the bulk region. Similar effects were confirmed for diamond-ground silicon wafers. Effects of overlapping irradiation were investigated and perfect crystallographic uniformity was achieved in the boundary region. The recovery process involved rapid melting of the near-surface amorphous layer, followed by epitaxial regrowth from the damage-free crystalline bulk.

  Info
Periodical
Key Engineering Materials (Volumes 389-390)
Edited by
Tsunemoto Kuriyagawa, Libo Zhou, Jiwang Yan and Nobuhito Yoshihara
Pages
469-474
DOI
10.4028/www.scientific.net/KEM.389-390.469
Citation
J. W. Yan, T. Asami, T. Kuriyagawa, "Complete Recovery of Subsurface Structures of Machining-Damaged Single Crystalline Silicon by Nd:YAG Laser Irradiation ", Key Engineering Materials, Vols. 389-390, pp. 469-474, 2009
Online since
September 2008
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