Paper Title:
Study on Adhesion Removal Model in CMP SiO2 ILD
  Abstract

In the process of CMP SiO2 ILD, the nano-particle with high surface energy in slurry has an essential impact on the efficiency and quality of CMP. In this paper the mode of nano-particle on the surface of SiO2 ILD is analysed and adhesion removal model corresponding to that is established. Through cycle polishing experiments, the change of nano-particle size and the state of particle surface before and after polishing is observed with TEM and Zeta potential analyzer, based on which the adhesion removal model is verified.

  Info
Periodical
Key Engineering Materials (Volumes 389-390)
Edited by
Tsunemoto Kuriyagawa, Libo Zhou, Jiwang Yan and Nobuhito Yoshihara
Pages
475-480
DOI
10.4028/www.scientific.net/KEM.389-390.475
Citation
D. M. Guo, R. H. Liu, R. K. Kang, Z. J. Jin, "Study on Adhesion Removal Model in CMP SiO2 ILD", Key Engineering Materials, Vols. 389-390, pp. 475-480, 2009
Online since
September 2008
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Price
$32.00
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