Study on Adhesion Removal Model in CMP SiO2 ILD |
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| Journal | Key Engineering Materials (Volumes 389 - 390) |
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| Volume | Advances in Abrasive Technology XI |
| Edited by | Tsunemoto Kuriyagawa, Libo Zhou, Jiwang Yan and Nobuhito Yoshihara |
| Pages | 475-480 |
| DOI | 10.4028/www.scientific.net/KEM.389-390.475 |
| Citation | Dong Ming Guo et al., 2008, Key Engineering Materials, 389-390, 475 |
| Online since | September, 2008 |
| Authors | Dong Ming Guo, Rui Hong Liu, Ren Ke Kang, Zhu Ji Jin |
| Keywords | Adhesion Removal, Chemical Mechanical Polishing (CMP), Silicon Dioxide, Slurry |
| Abstract | In the process of CMP SiO2 ILD, the nano-particle with high surface energy in slurry has an essential impact on the efficiency and quality of CMP. In this paper the mode of nano-particle on the surface of SiO2 ILD is analysed and adhesion removal model corresponding to that is established. Through cycle polishing experiments, the change of nano-particle size and the state of particle surface before and after polishing is observed with TEM and Zeta potential analyzer, based on which the adhesion removal model is verified. |
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