Study on Adhesion Removal Model in CMP SiO2 ILD |
| Journal |
Key Engineering Materials (Volumes 389 - 390) |
| Volume |
Advances in Abrasive Technology XI |
| Edited by |
Tsunemoto Kuriyagawa, Libo Zhou, Jiwang Yan and Nobuhito Yoshihara |
| Pages |
475-480 |
| DOI |
10.4028/www.scientific.net/KEM.389-390.475 |
| Online since |
September, 2008 |
| Authors |
Dong Ming Guo, Rui Hong Liu, Ren Ke Kang, Zhu Ji Jin |
| Keywords |
Adhesion Removal, Chemical Mechanical Polishing, Silicon Dioxide, Slurry |
| Abstract |
In the process of CMP SiO2 ILD, the nano-particle with high surface energy in slurry has
an essential impact on the efficiency and quality of CMP. In this paper the mode of nano-particle on
the surface of SiO2 ILD is analysed and adhesion removal model corresponding to that is established.
Through cycle polishing experiments, the change of nano-particle size and the state of particle
surface before and after polishing is observed with TEM and Zeta potential analyzer, based on which
the adhesion removal model is verified. |
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