Polishing Characteristics on Silicon Wafer
Using Fixed Nano-Sized Abrasive Pad
|
| Journal |
Key Engineering Materials (Volumes 389 - 390) |
| Volume |
Advances in Abrasive Technology XI |
| Edited by |
Tsunemoto Kuriyagawa, Libo Zhou, Jiwang Yan and Nobuhito Yoshihara |
| Pages |
487-492 |
| DOI |
10.4028/www.scientific.net/KEM.389-390.487 |
| Online since |
September, 2008 |
| Authors |
Pei Lum Tso, Cheng Yi Shih |
| Keywords |
Fixed Abrasive Pad, Hybrid Process, Mechanical Polishing |
| Abstract |
A mechanical polishing process was used to reduce surface roughness through
mechanical fracturing and removal of the substrate’s roughened regions. It was thus necessary to
understand the effect of grain size and morphology on the material removal mechanisms of silicon
wafers by stepwise polishing using a fixed abrasive pad. A hybrid process combining the optimized
silicon polishing recipe for rapid roughness reduction with a micro-sized diamond, and then
polishing using a nano-sized diamond to produce a final finished surface, may be the optimum
approach. The best result using the hybrid polishing process was the surface roughness (Ra) value
of 3.32 nm. |
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