Achieving a Damage-Free Polishing of Mono-Crystalline Silicon |
| Journal |
Key Engineering Materials (Volumes 389 - 390) |
| Volume |
Advances in Abrasive Technology XI |
| Edited by |
Tsunemoto Kuriyagawa, Libo Zhou, Jiwang Yan and Nobuhito Yoshihara |
| Pages |
504-509 |
| DOI |
10.4028/www.scientific.net/KEM.389-390.504 |
| Online since |
September, 2008 |
| Authors |
A.Q. Biddut, Liang Chi Zhang, Y.M. Ali, Zong Wen Liu |
| Keywords |
Phase Transformation, Polishing, Silicon, TEM |
| Abstract |
This paper experimentally investigates the micro-structural changes in mono-crystalline
silicon induced by abrasive polishing with abrasive grain size and applied pressure. It was found
that while the large abrasives of about 15 μm and 300 nm in diameter induce both residual
amorphous phase and various residual crystalline structures and dislocations, the finer abrasives of
about 50 nm in diameter only produce residual amorphous phase in the top subsurface of polished
silicon. With the fine abrasives, reducing applied pressure reduces the amorphous layer thickness,
and a damage-free polishing can be achieved at the pressure of 20 kPa. |
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