Polishing Characteristics of CMP for Oxygen Free Copper
with Manganese Oxide Abrasives
|
| Journal |
Key Engineering Materials (Volumes 389 - 390) |
| Volume |
Advances in Abrasive Technology XI |
| Edited by |
Tsunemoto Kuriyagawa, Libo Zhou, Jiwang Yan and Nobuhito Yoshihara |
| Pages |
515-520 |
| DOI |
10.4028/www.scientific.net/KEM.389-390.515 |
| Online since |
September, 2008 |
| Authors |
Ryunosuke Sato, Yoshio Ichida, Yoshitaka Morimoto, Kenji Shimizu |
| Keywords |
Chemical Mechanical Polishing, Manganese Oxide Abrasives, Mn2O3, Oxygen Free Copper |
| Abstract |
A series of polishing experiments have been carried out using Mn2O3 as abrasive grains to
examine the polishing characteristics of CMP for oxygen-free copper. It has been found that the
polishing rate increases as the polishing speed and/or polishing pressure increases, also the role of
polishing speed on the polishing rate is more significant than that of the polishing pressure. The
effects of the polishing conditions are however small, when polishing a finished surface roughness of
about Ra 5 nm. A long polishing time, with an approximately constant polishing rate, can be
achieved, without dressing, with a polishing pressure P = 9.4 kPa. It was found that higher polishing
pressures could achieve a higher polishing rate, however the polishing pressure would decrease as the
polishing time increased. |
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