Paper Title:
Dielectric Properties of β-SiAlON at High Temperature Using Perturbation Method
  Abstract

-SiAlON with various z-values (z = 0.5~4.0) were produced by hot pressing. The dielectric properties (dielectric constant and tangent loss) of -SiAlON were characterized by the post-resonator method at room temperature and by the perturbation method from room temperature to 1200 oC at 2.45 GHz, respectively. Effect of z-values and temperatures with -SiAlON were investigated.

  Info
Periodical
Edited by
Katsutoshi Komeya, Yi-Bing Cheng, Junichi Tatami and Mamoru Mitomo
Pages
121-123
DOI
10.4028/www.scientific.net/KEM.403.121
Citation
Y. H. Seong, H. N. Kim, D. K. Kim, "Dielectric Properties of β-SiAlON at High Temperature Using Perturbation Method ", Key Engineering Materials, Vol. 403, pp. 121-123, 2009
Online since
December 2008
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