Paper Title:
Fabrication and Evaluation of AlN–SiC Solid Solutions with p-Type Electrical Conduction
  Abstract

AlN–SiC solid solutions with p-type electrical conduction were fabricated with the addition of small amounts of Al and C. Powder mixtures of AlN and SiC with small amounts of Al and C (below 10 mol%) were consolidated by spark plasma sintering (SPS) at 2000°C for 10 min under 1 atm Ar, and then heat-treated at 2200°C for 3 h in an Ar flow to afford 2H AlN–SiC solid solutions. The relative densities of the 50AlN-50SiC-Al4C3 (A50-1AC) and 50AlN-50SiC-3Al4C3 (A50-3AC) samples were about 95%, whereas that of the 75AlN-25SiC-Al4C3 (A75-1AC) sample was about 86%. X-ray diffractometry (XRD) analysis showed that the samples comprised only the 2H phase, and except in the case of the A50-3AC sample, no diffraction peaks of Al and C were observed. Although the samples without the additives (Al and C) were electrical insulators, addition of Al and C introduced p-type semiconduction. The electrical conductivities at 300°C of the A50-1AC and A50-3AC samples were about 30 and 100 S/m, respectively, whereas that of the A75-1AC sample was about 10–1 S/m. It was found that addition of Al and C brought about electrical conduction in AlN–SiC solid solutions.

  Info
Periodical
Edited by
Katsutoshi Komeya, Yi-Bing Cheng, Junichi Tatami and Mamoru Mitomo
Pages
39-42
DOI
10.4028/www.scientific.net/KEM.403.39
Citation
R. Kobayashi, J. Tatami, T. Wakihara, K. Komeya, T. Meguro, R. Tu, T. Goto, "Fabrication and Evaluation of AlN–SiC Solid Solutions with p-Type Electrical Conduction", Key Engineering Materials, Vol. 403, pp. 39-42, 2009
Online since
December 2008
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