Silicon carbide (SiC) materials have increasingly been needed in the wide range of industries, such as for structural components, automobile parts, space telescope, X-ray mirror, and next-generation semiconductors. However, SiC materials have difficulties in super-smooth finishing because of their hard and brittle characteristics. The authors have been investigating appropriate conditions on their finishing by fine-grinding with the unique grinding process called ELID (Electrolytic In-process Dressing) grinding method. The ELID grinding method has a stable grinding ability, so very detailed characteristics of their material-remove mechanisms were to be investigated. Surface analysis of each material has been discussed through the ELID, and this study proposes good finishing conditions for SiC. In this paper, the advantages of the applied fine-grinding are shown, and unique features on grinding characteristics of SiC through various grinding experimental parameters are described.