Experimental Investigations on Material Removal Rate and Surface Roughness in Lapping of Substrate Wafers: A Literature Review |
|
| Journal | Key Engineering Materials (Volume 404) |
|---|---|
| Volume | Progress in Abrasive and Grinding Technology |
| Edited by | Xipeng Xu |
| Pages | 23-31 |
| DOI | 10.4028/www.scientific.net/KEM.404.23 |
| Citation | Wei Long Cong et al., 2009, Key Engineering Materials, 404, 23 |
| Online since | January, 2009 |
| Authors | Wei Long Cong, Peng Fei Zhang, Zhi Jian Pei |
| Keywords | Lapping, Material Removal Rate (MRR), Sapphire, Silicon, Substrate Wafer, Surface Roughness (SR) |
| Abstract | Lapping is an important material-removal process for manufacturing of substrate wafers. Objectives of lapping include removing subsurface damage in sliced wafers, thinning wafers to target thickness, and achieving a high degree of parallelism and flatness of wafer surfaces. This paper reviews the literature on lapping of substrate wafers. It presents reported experimental results on effects of input parameters (lapping pressure, plate rotation speed, abrasive grain size, slurry concentration, and slurry flow rate) on material removal rate and surface roughness. |
| Full Paper | 
Get the full paper by clicking here
|
First page example
