Paper Title:
Deformation in Mono-Crystalline Silicon Caused by High Speed Single-Point Micro-Cutting
  Abstract

This paper investigates the deformation in monocrystalline silicon subjected to single-point cutting with the cutting speed up to 46.78 m/s, the depth of cut of 2 μm, and the feed rate of 5 and 30 μm/rev. Raman spectroscopy and transmission electron microscopy were used to characterize the subsurface damages. It was found that the increase of either the feed rate or cutting speed increases the thickness of amorphous layer and penetration depth of dislocations. At the feed rate of 30 μm/rev and cutting speed of 12.48 m/s, a new dislocation system was initiated. An unknown peak was detected by Raman spectroscopy, which may indicate an unknown Si phase.

  Info
Periodical
Key Engineering Materials (Volumes 407-408)
Edited by
Fan Rui, Qiao Lihong, Chen Huawei, Ochi Akio, Usuki Hiroshi and Sekiya Katsuhiko
Pages
347-350
DOI
10.4028/www.scientific.net/KEM.407-408.347
Citation
A.Q. Biddut, J. W. Yan, L. C. Zhang, T. Ohta, T. Kuriyagawa, B. Shaun, "Deformation in Mono-Crystalline Silicon Caused by High Speed Single-Point Micro-Cutting", Key Engineering Materials, Vols. 407-408, pp. 347-350, 2009
Online since
February 2009
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Price
$32.00
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