Dual-lapping was a process to planarize the surface of the sapphire wafer, the nature of surface&subsurface damage and the surface uniformity was depended on the material removal mode and materials removal ratio. Material removal mode was studied in this paper, and the model of material removal was set up too. The SEM was used to scan the processed sapphire surface and the different removal style (two body and three body) were discovered. This research provided valuable insights into the material removal ratio and the dependence of lapping-induced damage on dual-lapping conditions, the asymmetry of abrasive granularity brought on the different materials removal mode and the surface asymmetry. The model was set up to qualitative analysis the material removal ratio in dual-lapping of sapphire, obtain the reasonable MMR and optimize the surface quality and the planarization result.