Paper Title:
Dynamic Analysis on Underlay Microstructure for Cu/Low-k Wafer during Wire Bonding
  Abstract

Two major analyses were conducted in this paper. In the first, experimental procedures are accomplished to measure the tensile mechanical properties of ultra thin gold wire (=1mil) before/after electric flame-off (EFO). Characteristics of free air ball (FAB), heat affected zone (HAZ) and as-drawn wire have been carefully investigated by nanoindentation, microhardness and self-design pull test fixture. Secondary, with the obtained experimental material data, a comprehensive finite element model using software ANSYS/LS-DYNA is successfully developed to simulate the wirebonding. Dynamic analysis is performed to evaluate the overall stress distributions on the underlay microstructure of Cu/low-k wafer. Special emphasizes are focused on the Copper via and the intermetal dielectric (IMD)/undoped silica glass (USG) dielectric microstructure.

  Info
Periodical
Key Engineering Materials (Volumes 419-420)
Edited by
Daizhong Su, Qingbin Zhang and Shifan Zhu
Pages
489-492
DOI
10.4028/www.scientific.net/KEM.419-420.489
Citation
H. C. Hsu, P. C. Chin, C. Y. Hu, W. Y. Chang, C. L. Yeh, Y. S. Lai, "Dynamic Analysis on Underlay Microstructure for Cu/Low-k Wafer during Wire Bonding", Key Engineering Materials, Vols. 419-420, pp. 489-492, 2010
Online since
October 2009
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Price
$32.00
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