Ferroelectric Properties of Epitaxial BiFe0.97Mn0.03O3 Thin Films with Different Crystal Orientations Deposited on Buffered Si Substrates

Tanaka, Junzo; Cross, Jeffrey S.; Shinozaki, Kazuo; Kiguchi, Takanori; Wakiya, Naoki; Go, Hyun Young; Yoshioka, Tomohiko; Sakurai, Osamu

Paper Titles

Measurement of d₁₅ Shear-Mode Piezoelectric Response in PZT Thin Film, p.95
Polarized Raman Study for Epitaxial PZT Thick Film with the Mixture Orientation of (100)/(001), p.99
Effect of PAA-NH₄ Dispersant on Dispersibility of Aqueous Pb(Zr, Ti)O₃ Slurries and Piezoelectric Properties of Resultant Sintered Bodies, p.103
Resistance Changes of (La, Sr)MnO₃ Thin Film via Exchange Bias Tuning by the Application of an External Electric Field, p.107
Ferroelectric Properties of Epitaxial BiFe_0.97Mn_0.03O₃ Thin Films with Different Crystal Orientations Deposited on Buffered Si Substrates, p.111
Effect of Stacking Layers on the Structure and Properties of Ca(Mg_1/3Nb_2/3)O₃ / CaTiO₃ Thin Films , p.115
Dielectric Properties of Pb_1-xBa_xZrO₃ Thin Films with Higher Barium Content, p.119
Preparation of N-Doped ZnO Films by MOCVD, p.123
Preparation of (Ba_1-x, Sr_x)TiO₃ Thin Films on Glazed Alumina Substrate and Improvement of Temperature Dependence of Dielectric Properties , p.127

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Paper Title:

Ferroelectric Properties of Epitaxial BiFe_0.97Mn_0.03O₃ Thin Films with Different Crystal Orientations Deposited on Buffered Si Substrates

Periodical	Key Engineering Materials (Volumes 421 - 422)
Main Theme	Asian Ceramic Science for Electronics III and Electroceramics in Japan XII
Edited by	Tadashi Takenaka, Hajime Haneda, Kazumi Kato, Masasuke Takata and Kazuo Shinozaki
Pages	111-114
DOI	10.4028/www.scientific.net/KEM.421-422.111
Citation	Hyun Young Go et al., 2009, Key Engineering Materials, 421-422, 111
Online since	December, 2009
Authors	Hyun Young Go, Naoki Wakiya, Takanori Kiguchi, Tomohiko Yoshioka, Osamu Sakurai, Jeffrey S. Cross, Junzo Tanaka, Kazuo Shinozaki
Keywords	BiFeO₃, Crystal Orientation, Epitaxial, PLD, Thin Film
Price	US$ 28,-

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Abstract

We investigated electrical properties of epitaxial Mn doped bismuth ferrite BiFe0.97Mn0.03O3 (BFMO) thin films with different crystal orientations deposited on Si substrates with appropriate buffer layers. Epitaxial SrRuO3 (SRO) thin films with (001), (101), and (111) orientations were grown on CeO2/yttria-stabilized zirconia (YSZ)/Si(001) substrates and YSZ/Si(001), respectively, by the insertion of MgO and TiO2 atomic layers using pulsed-laser deposition (PLD). Using spin coating, we deposited BFMO thin films onto orientated SRO thin films. The BFMO orientation followed the SRO orientation. The Pr values of the BFMO were ordered as follows {111}>{110}>{100}, which is the same as that predicted by crystallographic considerations. The largest Pr value of the {111} orientation is 76 μC/cm2 at 100 kHz, 25°C.