Paper Title:
Preparation of N-Doped ZnO Films by MOCVD
  Abstract

Crystalline ZnO films were grown on Y-stabilized ZrO2 substrates heated at 300 - 600 °C in NH3 atmosphere. It is clarified from Fourier transform infrared measurements that N-doped ZnO films grown at 350 and 400 °C contain N-C and Zn-H bonds. In the devices of n-type ZnO/N-doped ZnO/Au, a good rectification characteristic is attained for an N-doped ZnO film deposited at 300°C, whereas a linear current vs. voltage characteristic is seen for a film deposited at 500 °C.

  Info
Periodical
Key Engineering Materials (Volumes 421-422)
Edited by
Tadashi Takenaka, Hajime Haneda, Kazumi Kato, Masasuke Takata and Kazuo Shinozaki
Pages
123-126
DOI
10.4028/www.scientific.net/KEM.421-422.123
Citation
K. Kobayashi , H. Kobayashi, Y. Tomita, Y. Maeda, Y. Khono, "Preparation of N-Doped ZnO Films by MOCVD", Key Engineering Materials, Vols. 421-422, pp. 123-126, 2010
Online since
December 2009
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Price
$32.00
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