Paper Title:
Preparation of (Ba1-x, Srx)TiO3 Thin Films on Glazed Alumina Substrate and Improvement of Temperature Dependence of Dielectric Properties
  Abstract

In this study, (Ba1-x,Srx)TiO3 thin films of various composition ratios were deposited on glazed Al2O3 substrates by the CSD method, and the temperature dependence of the dielectric property was analyzed. The dielectric property of the BST (80/20) thin film annealed at C was highly tunable, and the temperature dependence of the dielectric constant was stabilized at around room temperature. However, this BST (80/20) thin film exhibited intense ferroelectricity. Its tan intensified to 0.0511 in the high-frequency range (1 MHz). After the BST thin film was annealed at 600C, the grain size of the BST thin film was reduced to 40 nm and the ferroelectricity was alleviated. The dielectric constant, tan, and tunability of the BST thin film at 100 kHz were 158, 0.0170, and 39.6 (214 kV/cm, 6.0 V), respectively. The change rate of the dielectric constant, which indicates its temperature dependence, was ±7 or less in the range of -55 to 85C. Therefore, this BST thin film was considered to guarantee a wide operation temperature range for microwave tunable devices.

  Info
Periodical
Key Engineering Materials (Volumes 421-422)
Edited by
Tadashi Takenaka, Hajime Haneda, Kazumi Kato, Masasuke Takata and Kazuo Shinozaki
Pages
127-130
DOI
10.4028/www.scientific.net/KEM.421-422.127
Citation
T. Nozaka, Y. Mizutani, G. Bhakdisongkhram, Y. Kawakami, M. Echizen, T. Nishida, H. Takeda, K. Uchiyama, T. Shiosaki, "Preparation of (Ba1-x, Srx)TiO3 Thin Films on Glazed Alumina Substrate and Improvement of Temperature Dependence of Dielectric Properties ", Key Engineering Materials, Vols. 421-422, pp. 127-130, 2010
Online since
December 2009
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$32.00
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