Paper Title:
Characteristics of Synthesized Diamond Films by Using CACVD Techniques at High Temperatures
  Abstract

This paper presents synthesized diamond films by using combustion activated chemical vapor deposition (CACVD) techniques. The characteristics of diamond films have been studied at wide ranges of temperature (30-400°C). The resistance of diamond films has been determined for hydrogen termination times of 5, 10, 15, and 20 minutes, and at the operation temperatures of 500, 600, and 700°C. The investigation found that, at 30°C a synthesized diamond film has a high resistance (1010 ), whereas at high temperatures (100-400°C) the resistance has decreased from 4.04 M to 2.42 M. The result obtained from the hydrogen termination showed that the resistance has decreased by 105-106  (at 30°C). Summarily, it can be stated that the higher the hydrogen termination times and operation temperatures, the lower the resistance of diamond films.

  Info
Periodical
Key Engineering Materials (Volumes 421-422)
Edited by
Tadashi Takenaka, Hajime Haneda, Kazumi Kato, Masasuke Takata and Kazuo Shinozaki
Pages
131-134
DOI
10.4028/www.scientific.net/KEM.421-422.131
Citation
Y. Wongprasert, S.B. Pongsai, "Characteristics of Synthesized Diamond Films by Using CACVD Techniques at High Temperatures", Key Engineering Materials, Vols. 421-422, pp. 131-134, 2010
Online since
December 2009
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Hong Ho Cheng, C.C. Chen
Abstract:Diamond has been well recognized a strategic engineering material. It possesses excellent physical and chemical properties including the...
1225
Authors: Wei Zuo, Bin Shen, Fang Hong Sun, Ming Chen
Abstract:Three-dimensional finite element simulations were used to investigate the influences of various hot filaments and other deposition...
864
Authors: Kazuyuki Hirama, Yoshikatsu Jingu, Masaru Ichikawa, Hitoshi Umezawa, Hiroshi Kawarada
Abstract:We fabricated diamond MISFETs on polycrystalline films using alumina gate insulator. A hole accumulation layer has been utilized as hole...
1349
Authors: Xiang Qin Meng, Wu Jun Fu, Bing Wang, Cheng Tao Yang
Chapter 14: Thin Films
Abstract:Nanocrystalline diamond (NCD) films were prepared on polycrystalline aluminum oxide (Al2O3) substrates by microwave plasma chemical vapor...
2419
Authors: Yan Feng Liu, Long Cheng Yin, Li Xin Zhao, You Jin Zheng
Chapter 1: Thin Films
Abstract:The DC plasma chemical vapor deposition (DC-PCVD) method was a promising technique to fabricate CVD diamond coatings in industry, because it...
7