Paper Title:
Influence of an External Magnetic Field on Injected Charges of a Cr2O3/Fe/CeO2/Si MIS Capacitor
  Abstract

We investigated the influence of an external magnetic field for the carrier injection process of a metal (Au) / insulator (Cr2O3/Fe/CeO2) / semiconductor (Si) (MIS) capacitor, in which the insulator consists of magnetic materials. By applying an electric field, electrons propagating through the CeO2 layer from Si were injected into the Fe or an oxygen deficiency layer formed around the Fe layer. When a magnetic field was applied, the hysteresis window width of this capacitor was reduced. I-V curve analyses under a magnetic field revealed that this reduction was more likely due to the magnetic state of the Fe layer and the interaction between Fe and Cr2O3.

  Info
Periodical
Key Engineering Materials (Volumes 421-422)
Edited by
Tadashi Takenaka, Hajime Haneda, Kazumi Kato, Masasuke Takata and Kazuo Shinozaki
Pages
157-160
DOI
10.4028/www.scientific.net/KEM.421-422.157
Citation
T. Yokota, S. Murata, S. Kito, M. Gomi, "Influence of an External Magnetic Field on Injected Charges of a Cr2O3/Fe/CeO2/Si MIS Capacitor", Key Engineering Materials, Vols. 421-422, pp. 157-160, 2010
Online since
December 2009
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$32.00
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