Paper Title:
Behavior of Hydrogen Atoms in Perovskite-Type Oxide Thin Films under Electric Fields
  Abstract

The behavior of hydrogen in (Ba,Sr)TiO3 (BST) thin film capacitors under electric fields was investigated by performing secondary ion mass spectroscopy (SIMS) analyses. It was clearly observed that the ingress of atmospheric hydrogen into BST thin film capacitors occurred through the anode and that it diffused toward the cathode under electric fields. In addition, it was found that the deterioration of the I-V properties of the BST thin film capacitors can be interpreted in terms of the distribution of hydrogen concentration in the BST thin films.

  Info
Periodical
Key Engineering Materials (Volumes 421-422)
Edited by
Tadashi Takenaka, Hajime Haneda, Kazumi Kato, Masasuke Takata and Kazuo Shinozaki
Pages
281-284
DOI
10.4028/www.scientific.net/KEM.421-422.281
Citation
K. Morito, T. Suzuki, Y. Mizuno, I. Sakaguchi, N. Ohashi, K. Matsumoto, H. Haneda, "Behavior of Hydrogen Atoms in Perovskite-Type Oxide Thin Films under Electric Fields", Key Engineering Materials, Vols. 421-422, pp. 281-284, 2010
Online since
December 2009
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Price
$32.00
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