Behavior of Hydrogen Atoms in Perovskite-Type Oxide Thin Films under Electric Fields |
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| Journal | Key Engineering Materials (Volumes 421 - 422) |
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| Volume | Asian Ceramic Science for Electronics III and Electroceramics in Japan XII |
| Edited by | Tadashi Takenaka, Hajime Haneda, Kazumi Kato, Masasuke Takata and Kazuo Shinozaki |
| Pages | 281-284 |
| DOI | 10.4028/www.scientific.net/KEM.421-422.281 |
| Citation | Kentaro Morito et al., 2009, Key Engineering Materials, 421-422, 281 |
| Online since | December, 2009 |
| Authors | Kentaro Morito, Toshimasa Suzuki, Youichi Mizuno, Isao Sakaguchi, Naoki Ohashi, Kenji Matsumoto, Hajime Haneda |
| Keywords | Barium Strontium Titanate, Capacitor, Deuterium, Electric Field, Highly Accelerated Life Test (HALT), Hydrogen, I-V Property, Secondary Ion Mass Spectroscopy (SIMS), Thin Film |
| Abstract | The behavior of hydrogen in (Ba,Sr)TiO3 (BST) thin film capacitors under electric fields was investigated by performing secondary ion mass spectroscopy (SIMS) analyses. It was clearly observed that the ingress of atmospheric hydrogen into BST thin film capacitors occurred through the anode and that it diffused toward the cathode under electric fields. In addition, it was found that the deterioration of the I-V properties of the BST thin film capacitors can be interpreted in terms of the distribution of hydrogen concentration in the BST thin films. |
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