Paper Title:
Photo-Assisted VOC Detection by Transparent pn Junction
  Abstract

The p-NiO/n-ZnO transparent pn heterojunction is prepared by RF magnetron sputtering technique and processed into a chemical sensor element by photolithography pattering and chemical etching process. Forward biased p-NiO/n-ZnO heterojunction sensor can detect VOCs at room temperature and its gas sensitivity is extremely enhanced with the assist of deep UV light incidence. Even if the testing gas is thermodynamically stable such as aromatic VOC, the p-NiO/n-ZnO heterojunction sensor can detect it with the concert mechanism involving “electric” and “photo” assistance.

  Info
Periodical
Key Engineering Materials (Volumes 421-422)
Edited by
Tadashi Takenaka, Hajime Haneda, Kazumi Kato, Masasuke Takata and Kazuo Shinozaki
Pages
348-351
DOI
10.4028/www.scientific.net/KEM.421-422.348
Citation
Y. Nakamura, Y. Morita, Y. Yoshida, S. Fujitsu, "Photo-Assisted VOC Detection by Transparent pn Junction", Key Engineering Materials, Vols. 421-422, pp. 348-351, 2010
Online since
December 2009
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