Paper Title:
Electrical Properties of Pt/Nb-Doped SrTiO3 Schottky Junctions
  Abstract

In this study, we successfully fabricated the Schottky junctions consisting of Pt electrode and high concentration Nb-doped (0.5 wt%) SrTiO3 (001) single crystal by sputtering process. The carrier concentrations of Nb-0.5wt%-doped SrTiO3 were determined as 1020 /cm3 order by Hall effect measurement. The electrical properties of junctions were investigated by measuring their current-voltage (I-V), capacitance-voltage (C-V) characteristics at temperature range from 80K to 400K. The hysteresis feature was observed that indicating the alteration of barrier height in junctions especially at lower temperature. The donor concentration and built-in potentials calculated from C-2-V data showed large discrepancy from Hall effect measurement indicating that the junctions deviate from the ideal Schottky diode model.

  Info
Periodical
Key Engineering Materials (Volumes 421-422)
Edited by
Tadashi Takenaka, Hajime Haneda, Kazumi Kato, Masasuke Takata and Kazuo Shinozaki
Pages
463-466
DOI
10.4028/www.scientific.net/KEM.421-422.463
Citation
J. Y. Li, T. Ohgaki, R. Matsuoka, H. Okushi, N. Ohashi, "Electrical Properties of Pt/Nb-Doped SrTiO3 Schottky Junctions", Key Engineering Materials, Vols. 421-422, pp. 463-466, 2010
Online since
December 2009
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$32.00
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